New reconstructions on silicon (111) surfaces.
نویسندگان
چکیده
منابع مشابه
Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces
Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstru...
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عنوان ژورنال:
- Physical review letters
دوره 57 8 شماره
صفحات -
تاریخ انتشار 1986